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LED54SC - Optically Immersed 5.4 µm LED
PLEASE NOTE: All IR LED specifications are currently
under review. 
LEDs are fabricated from III-V heterostructures grown onto InAs
substrates. Optical immersion of lens with flip-chip devices enables three to
five fold increase of output power.
Features
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Low power consumptions (µW to mW range) |
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Angle of emittance <40° |
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Switching time: 10 ns (typical), 20 ns (max) |
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Narrow bandwidth: FWHM = 0.1 to 0.2
λmax |
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Wide operating temperature range |
Specifications (@T=22 °C)
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Peak wavelength, λ, µm: 5.40 ± 0.10
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Spectral width, FWHM, µm: 0.60 ± 0.05 |
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Current test conditions: Pulse duration, µs:
<10 |
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Current test conditions: Pulse period, µs:
>1000 |
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Voltage at drive current I = 1A, Upulse, V: 0.4
to 0.7 |
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Pulsed power at I=1 A, Ppulse, µW:
>25 |
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CW power at I=100 mA (attached to a heatsink),
PCW, µW: >5 |
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Switching time, ns: 10 (typical), 20 (max) |
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Package code: Screw |
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Thread: M5x0.5 |
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Emission size, mm: 3.2 diameter |
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Far-field pattern, FWHM, °: <40 |
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Far-field pattern deviation, °: ± 10 |
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Operation (storage) conditions, °C: -25 to +60
(+80) |
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Polarity: short wire or black point is negative |
Package dimensions:  |
LED54SC