|
Features
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UVB selective photodiode |
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Active Area A = 0.076 mm² |
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TO18 metal housing |
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10mW/cm² peak radiation results in a current of approx.
700 nA |
About the material
(Aluminium) Gallium Nitride (Al)GaN(Al)GaN is a new semiconductor
material for visible blind UV photodiodes. By modification of the Al - to - Ga
stoichiometry it is possible to produce photodiodes with different spectral
behaviour. This allows to offer Photodiodes sensible for broad band UV
(UVA+UVB+UVC), for UVB-only and for UVC only without using a filter.
Maximum Ratings
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Operating Temperature Range, Topt: -25 … +70
°C |
|
Storage Temperature Range, Tstor: 0 … +100
°C |
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Soldering Temperature (3s), Tsold: 260
°C |
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Reverse voltage, VRmax: 5 V |
General Characteristics (T=25°C)
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Active area, A: 0.076 mm² |
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Dark current (0.1 V reverse bias), Id: 100
fA |
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Capacitance, C: 24 pF |
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Short circuit (10mW/cm2 at peak), I0: 700
nA |
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Temperature coefficient, Tc: <-0.3
%/K |
Spectral Characteristics
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Max. spectral sensitivity, Smax: 0.130
A/W |
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Wavelength of max. spectral sensitivity,
λmax: 310nm |
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Sensitivity range (S=011*Smax): 240 … 320
nm |
| |
Visible blindness (Smax / S>400nm),
VB: 103 |
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AG32S