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UV Selective GaN based Sensor AG38S-TO

FeaturesAlGaN-UVB Selective Sensor

Broadband UVA-UVB-UVC selective photodiode

Optimally suited for UV consumer-applications

Intrinsically insensitive in the visible due to the wide-bandgap semiconductor material GaN

TO-18 metal package with 0.076 mm2 active chip area

High speed and low noise

Maximum Ratings

Operating temperature range: -25 to +80°C

Reverse voltage: 5V

General Characteristics

Active area: 0.076 mm²

Dark current (0.1 V reverse bias): 100 fA

Capacitance: 24 pF

Short circuit current (at bright sun): ~200 nA

Spectral Characteristics

Max. spectral sensitivity: 0.14 A/W

Wavelength of max. spectral sensitivity: 350nm

Range of spectral sensitivity: 220 - 370 nm

Ordering Information

AG38S-TO

 GaN UV Photodiode: 220 - 370 nm

Data Sheet

PDFAG38S-TO data sheet - pdf (138K)

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