Broad band UVA-UVB-UVC photodiode in TO18 metal package

Silicon Carbide based sensor chip for extreme irradiation hardness

Intrinsic visible blindness due to wide-bandgap semiconductor material

Completely insensitive to the visible (S_280nmS_400nm>10⁴) spectrum without filters

Chip manufactured by Cree Research Inc., U.S.A.

Housing material is manufactured by Schott, Germany

Quality control in Germany

Active area: 0.22 mm²

Dark current (1 V reverse bias): 2 fA

Capacitance: 80 pF

Short circuit current (at bright sun): ~180 nA

Max. spectral sensitivity: 0.13 A/W

Wavelength of max. spectral sensitivity: 280 nm

Range of spectral sensitivity: 220 - 360 nm

SG01M

SiC UV Photodiode: 210 - 380 nm