Broad band UVA-UVB-UVC photodiode

Optimally suited for UVC high radiation control

Silicon Carbide based sensor chip for extreme irradiation hardness

Intrinsic visible blindness due to wide-bandgap semiconductor material

TO5 metal package with 0.054 mm² active chip area

Chip manufactured by Cree Research Inc., U.S.A.

Housing material is manufactured by Schott, Germany

Quality control in Germany

Operating temperature range: -25 - +70 °C

Reverse voltage: 20V

Active area: 0.054 mm²

Dark current (1 V reverse bias): 1 fA

Capacitance: 21 pF

Short circuit current (at bright sun): ~70 nA

Max. spectral sensitivity: 0.13 A/W

Wavelength of max. spectral sensitivity: 285 nm

Range of spectral sensitivity: 210 - 380 nm

SG01S-5

SiC UV Photodiode: 210 - 380 nm