| |
|
Features
 |
Operating temperature up to 170oC |
 |
Broad band UVA-UVB-UVC photodiode |
 |
Optimally suited for UVC high radiation control |
 |
Silicon carbide based chip for extreme irradiation
hardness |
 |
Intrinsic visible blindness due to wide-bandgap
semiconductor material |
 |
TO-18 metal package with 0.054mm2 active chip
area |
Material Source
 |
Chip manufactured by Cree Research Inc., U.S.A. |
 |
Housing material is manufactured by Schott, Germany |
 |
Quality control in Germany |
Spectral Characteristics
 |
Max. spectral sensitivity: 0.13 A/W |
 |
Wavelength of max. spectral sensitivity: 285 nm |
 |
Range of spectral sensitivity: 210 - 380 nm |
|
|
Ordering Information
|
SG01S-HT |
High temperature SiC UV Photodiode: 210 - 380
nm
|
|
|
|
|
Data Sheet
SG01S-HT data
sheet - pdf (2.0MB)
|
| |